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PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
Rev. 02 -- 15 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E.
1.2 Features
Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base Min IC = 500 mA; IB = 50 mA
[1]
Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance
Typ 380
Max 40 500 1 500
Unit V mA A m
-
Pulse test: tp 300 s; 0.02
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
1 2 3 1 2
sym021
Simplified outline
Symbol
3
3. Ordering information
Table 3. Ordering information Package Name PBSS2540E SC-75 Description plastic surface mounted package; 3 leads Version SOT416 Type number
4. Marking
Table 4. Marking codes Marking code 1S Type number PBSS2540E
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
2 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg
[1] [2]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature
Conditions open emitter open base open collector
Min -
Max 40 40 6 500 1 100 150 250 150 +150 +150
Unit V V V mA A mA mW mW C C C
Tamb 25 C
[1] [2]
-65 -65
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
300 Ptot (mW)
(1)
006aaa412
200
(2)
100
0 0 40 80 120 160 Tamb (C)
(1) FR4 PCB, mounting pad for collector 1cm2 (2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
3 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2]
Min -
Typ -
Max 833 500
Unit K/W K/W
[1] [2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.02 10 0.01 0 0.75
006aaa413
1 10-5
10-4
10-3
10-2
10-1
1
10
102 t p (s)
103
FR4 PCB, mounting pad for collector 1cm2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
4 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA VCE = 2 V; IC = 500 mA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 200 mA; IB = 10 mA IC = 500 mA; IB = 50 mA RCEsat VBEsat VBEon fT Cc collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance
Pulse test: tp 300 s; 0.02
[1] [1] [1] [1]
Min 200 100 50 250 -
Typ 380 450 -
Max 100 50 100 50 100 200 250 500 1.2 1.1 6
Unit nA A nA
IEBO hFE
mV mV mV mV m V V MHz pF
IC = 500 mA; IB = 50 mA IC = 500 mA; IB = 50 mA VCE = 2 V; IC = 100 mA VCE = 5 V; IC = 100 mA; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz
[1]
[1]
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
5 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
600 hFE 500
(1)
006aaa380
1100 VBE (mV) 900
(1)
006aaa381
400
(2)
700
(2)
300 500 200
(3)
(3)
100
300
0 10-1
1
10
102 IC (mA)
103
100 10-1
1
10
102 IC (mA)
103
VCE = 2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
VCE = 2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 3.
DC current gain as a function of collector current; typical values
1
006aaa382
Fig 4.
Base-emitter voltage as a function of collector current; typical values
1
006aaa383
VCEsat (V)
VCEsat (V)
10-1
(1) (2) (3)
10-1
(1) (2)
(3)
10-2 10-1
1
10
102 IC (mA)
103
10-2 10-1
1
10
102 IC (mA)
103
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 5.
Collector-emitter saturation voltage as a function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a function of collector current; typical values
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
6 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
1.2 VBEsat (V) 1.0
(1)
006aaa384
103 RCEsat () 102
006aaa385
0.8
(2) (3)
0.6
10
(1) (2) (3)
0.4 1 0.2 10-1 10-1
0 10-1
1
10
102 IC (mA)
103
1
10
102 IC (mA)
103
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 7.
Base-emitter saturation voltage as a function of collector current; typical values
1
006aaa386
Fig 8.
Collector-emitter saturation resistance as a function of collector current; typical values
006aaa387
103 RCEsat () 102
IC (A) 0.8
0.6
IB (mA) = 25 22.5 20 17.5 15 12.5 10 7.5 5 2.5
10
(1) (2) (3)
0.4
1 0.2
0 0 1 2 3 4 VCE (V) 5
10-1 10-1
1
10
102 IC (mA)
103
Tamb = 25 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 9.
Collector current as a function of collector-emitter voltage; typical values
Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
7 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
8. Package outline
1.8 1.4 3 0.45 0.15
0.95 0.60
1.75 0.9 1.45 0.7
1
2 0.30 0.15 1 0.25 0.10 04-11-04
Dimensions in mm
Fig 11. Package outline SOT416 (SC-75)
9. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS2540E
[1]
Package SOT416
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 10000 -135
For further information and the availability of packing methods, see Section 13.
10. Soldering
2.2 0.6 0.7 1.1
2 2.0 0.85 3 1 0.5 (3x) 1.5
0.6 (3x) 1.9 Dimensions in mm
solder lands solder resist
msa438
solder paste occupied area
Reflow soldering is the only recommended soldering method.
Fig 12. Reflow soldering footprint
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
8 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
11. Revision history
Table 9. Revision history Release date 20091115 Data sheet status Product data sheet Change notice Supersedes PBSS2540E_1 Document ID PBSS2540E_2 Modifications:
* * * *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 5 "Collector-emitter saturation voltage as a function of collector current; typical values": VCEsat unit amended from mV to V Figure 6 "Collector-emitter saturation voltage as a function of collector current; typical values": VCEsat unit amended from mV to V Figure 12 "Reflow soldering footprint": updated Product data sheet -
PBSS2540E_1
20050504
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
9 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS2540E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 November 2009
10 of 11
NXP Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 November 2009 Document identifier: PBSS2540E_2

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